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| '9 9 n ew ! HMC222C12 MICROWAVE CORPORATION GaAs MMIC SP4T SWITCH NON-REFLECTIVE DC TO 6.0 GHz FEBRUARY 2001 V02.0101 Features SINGLE POSITIVE SUPPLY: Vdd = +5V INTEGRATED 2:4 TTL DECODER CERAMIC SMT PACKAGE General Description flective SP4T switch in a ceramic surface mount package. This SP4T switch covers RF telecom/datacom bands from DC - 6 GHz. The switch offers a single positive bias and true TTL/CMOS compatibility. A 2:4 decoder is integrated on the switch requiring only 2 control lines and a +5V bias to select each path. An input IP3 of +40 dBm helps maintain the best possible dynamic range in receiver & test instrument applications. The integrated 2:4 TTL/CMOS decoder replaces 8 control lines normal required by GaAs SP4T switches. BROADBAND PERFORMANCE: DC to 6GHz The HMC222C12 is a broadband non-re- 7 Guaranteed Performance SWITCHES For TTL Control and Vdd = +5V in a 50 Ohm system, -40 to +85 deg C Parameter Insertion Loss Isolation Return Loss Return Loss "On State" RF1-4 "Off State" Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 6.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 6.0 GHz DC - 2.0 GHz DC - 6.0 GHz 0.7 - 6.0 GHz 2.0 - 6.0 GHz 0.5 - 6.0 GHz 0.5 - 6.0 GHz 0.5 - 6.0 GHz 35 150 ns ns Min. Typ. 1.9 2.1 2.4 52 43 27 18 12 >10 14 20 43 Max. 2.2 2.5 2.8 Units dB dB dB dB dB dB dB dB dB m dB m SMT 42 37 22 15 9 6.5 11 17 SP4T Input Power for 1dB Compression Input Third Order Intercept (Two-Tone Input Power = +7dBm Each Tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 82 '9 9 HMC222C12 MICROWAVE CORPORATION ne w ! HMC222C12 SP4T SWITCH NON-REFLECTIVE DC TO 6.0 GHz V02.0101 FEBRUARY 2001 Insertion Loss 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 -3.5 -4 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +85 C -40 C ISOLATION (dB) +25 C -20 -30 -40 -50 0 -10 Isolation RF1 & RF4 RF2 & RF3 -60 -70 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Return Loss 0 0.1 and 1 dB Input Compression Point 24 COMPRESSION POINT (dBm) 22 20 18 16 14 12 10 1 dB Compression Point 7 SWITCHES -5 RETURN LOSS (dB) RFC RF1-4 Off -10 -15 -20 RF1-4 On -25 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 83 SMT SP4T 0.1 dB Compression Point '9 9 n ew ! HMC222C12 MICROWAVE CORPORATION HMC222C12 SP4T SWITCH NON-REFLECTIVE DC TO 6.0 GHz FEBRUARY 2001 V02.0101 Functional Diagram 7 SWITCHES Absolute Maximum Ratings Bias Voltage Range (Port Vdd) Control Voltage Range (A & B) Storage Temperature Operating Temperature Maximum Input Power Vdd = +5 Vdc +7.0 Vdc -0.5V to Vdd + 1Vdc -65 to +150 deg C -40 to +85 deg C +16dBm (0.05-0.5GHz) +22dBm (0.5-6.0GHz) Truth Table Control Input A Low High Low High B Low Low High High Signal Path State RFCOM to: RF1 RF2 RF3 RF4 SMT SP4T NOTE: 1) DC blocking capacitors are required at ports RFC and RF1, 2, 3, 4. Bias Voltage & Current Vdd Range = +5.0 Vdc 10% V dd (Vdc) +5.0 Idd (Typ.) (mA) 3.0 Idd (Max.) (mA) 5.0 TTL/CMOS Control Voltages State Low High Bias Condition 0 to +0.8Vdc @5uA Typ. +2.0 to +5.0 Vdc @ 50uA Typ. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 84 '9 9 HMC222C12 MICROWAVE CORPORATION ne HMC222C12 SP4T SWITCH NON-REFLECTIVE DC TO 6.0 GHz V02.0101 w ! FEBRUARY 2001 Outline Drawing 7 1. MATERIAL: A) PACKAGE BODY & COVER : WHITE ALUMINA (92%) B) LEADS: KOVAR (TM) OR ASTM F-15 (ALLOY 42) EQUIVALENT PLATING (LEADS): ELECTROLYTIC GOLD 25 MICROINCHES. MINIMUM, OVER ELECTROLYTIC NICKEL 100 TO 250 MICROINCHES DIMENSIONS ARE IN INCHES (MILLIMETERS), UNLESS OTHERWISE SPECIFIED TOL. ARE 0.005. ALL UNLABELED LEADS ARE GROUND. 2. 3. 4. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 85 SMT SP4T SWITCHES '9 9 n ew ! HMC222C12 MICROWAVE CORPORATION HMC222C12 SP4T SWITCH NON-REFLECTIVE DC TO 6.0 GHz FEBRUARY 2001 V02.0101 Eval Board Layout (Top View) 7 SWITCHES The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and exposed ground paddle should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. SP4T List of Material Item J1 - J5 Description PC Mount SMA Connector D C Pi n 100pF Capacitor, 0402 Pkg. 0.01 uF Capacitor, 0603 Pkg. HMC222C12 SP4T Switch 103045 Evaluation PCB 1.4 x 1.5 SMT J6 - J9 C1 - C5 C6 U1 PC B* *Circuit Board M aterial: Rogers 4350 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 86 '9 9 HMC222C12 MICROWAVE CORPORATION ne HMC222C12 SP4T SWITCH NON-REFLECTIVE DC TO 6.0 GHz V02.0101 w ! FEBRUARY 2001 NOTES: 7 SWITCHES 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 87 SMT SP4T |
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